Quantum Dot fabrication techniques for QD diode lasers employ self-organized growth of uniform nanometer-scale islands of InGaAs on the surface of GaAs or InP. Under the proper choice of deposition conditions, a layer of material with a lattice constant different from that of the substrate may spontaneously transform to an array of three-dimensional islands. The size of these islands provides quantization in all three directions making them Quantum Dots.
Diode lasers based on InAs/GaAs Quantum Dots developed by Innolume and Zia Lasers (acquired by Innolume in December 2006) are uniquely positioned to serve silcon photonics as light sources in order to bring optical interconnect technologies to the mainstream computer applications.
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Three-dimensional nature of quantization of electrons and holes in these islands provides significantly improved temperature stability of laser output power basic characteristics. Fully temperature independent operation has been demonstrated eliminating the need of expensive control schemes.
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QD lasers demonstrate extremely low intensity noise, being an ideal CW source of light for high speed external modulation.
Owing to inhomogeneous broadening caused by size distribution of QDs, the effect of spectral hole burning can be controllably used to form very broad lasing spectrum (>80 nm) with uniform intensity distribution. These broad-band or “white” lasers can be used in WDM silicon photonics systems.
Another effect of broad gain spectrum of QD lasers is very stable mode-locking regime with high peak power, which has been unachievable. Mode-locked laser is a source of clocking in future silicon chips with high clocking frequency enabled by optical clock technology.
The emission range of InGaAs/GaAs QD lasers of 1.064 – 1.31 micrometer fits well the window of transparency of silicon based waveguides.
QD lasers arm Silicon Photonics to deliver cost efficient solutions for future Optical Interconnect and Optical Clock Systems.
Innolume has also developed a wide portfolio of laser
for specific wavelength range between 1.064 and 1.31 micron for medical, sensing and other applications.
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